Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SCT2H12NY
Standard Package	400
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	1.5Ohm @ 1.1A, 18V
Vgs(th) (Max) @ Id	4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs	14nC @ 18V
Vgs (Max)	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds	184pF @ 800V
FET Feature	-
Power Dissipation (Max)	44W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-268
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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SCT2H12NYTB

Part NumberSCT2H12NYTB