SCT2160KEC
SCT2160KEC
Part Number SCT2160KEC
Description MOSFET N-CH 1200V 22A TO-247
Package / Case TO-247-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 1200V 22A (Tc) 165W (Tc) Through Hole TO-247
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SCT2160KEC - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SCT2160KE
Standard Package 360
Manufacturer Rohm Semiconductor
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 208mOhm @ 7A, 18V
Vgs(th) (Max) @ Id 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 62nC @ 18V
Vgs (Max) +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 800V
FET Feature -
Power Dissipation (Max) 165W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
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