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C3M0120090D


C3M0120090D

Part NumberC3M0120090D

Manufacturer

Description

Datasheet

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

C3M0120090D - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package30
ManufacturerCree/Wolfspeed
SeriesC3M™
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs155mOhm @ 15A, 15V
Vgs(th) (Max) @ Id3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs17.3nC @ 15V
Vgs (Max)+18V, -8V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 600V
FET Feature-
Power Dissipation (Max)97W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

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