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BSM600C12P3G201


BSM600C12P3G201

Part NumberBSM600C12P3G201

Manufacturer

Description

Datasheet

Package / CaseModule

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Lead TimeTo be Confirmed

Detailed Description

BSM600C12P3G201 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package4
ManufacturerRohm Semiconductor
Series-
PackagingTray
Part StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C600A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id5.6V @ 182mA
Vgs (Max)+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds28000pF @ 10V
FET Feature-
Power Dissipation (Max)2460W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageModule
Package / CaseModule

BSM600C12P3G201 - Related Products

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BSM600C12P3G201 - Tags

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