C2M0280120D
C2M0280120D
Part Number C2M0280120D
Description MOSFET N-CH 1200V 10A TO-247-3
Package / Case TO-247-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 1200V 10A (Tc) 62.5W (Tc) Through Hole TO-247-3
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C2M0280120D - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet C2M0280120D
Standard Package 30
Manufacturer Cree/Wolfspeed
Series Z-FET™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 370mOhm @ 6A, 20V
Vgs(th) (Max) @ Id 2.8V @ 1.25mA (Typ)
Gate Charge (Qg) (Max) @ Vgs 20.4nC @ 20V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 259pF @ 1000V
FET Feature -
Power Dissipation (Max) 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
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