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NTHL080N120SC1


NTHL080N120SC1

Part NumberNTHL080N120SC1

Manufacturer

Description

Datasheet

Package / CaseTO-247-3 Variant

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

NTHL080N120SC1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package450
ManufacturerON Semiconductor
Series-
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs56nC @ 20V
Vgs (Max)+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds1670pF @ 800V
FET Feature-
Power Dissipation (Max)348W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3 Variant

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