NTHL080N120SC1
NTHL080N120SC1
Part Number NTHL080N120SC1
Description SIC MOS TO247 80MW 1200V
Package / Case TO-247-3 Variant
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 1200V 44A (Tc) 348W (Tc) Through Hole TO-247-3
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NTHL080N120SC1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NTHL080N120SC1
Standard Package 450
Manufacturer ON Semiconductor
Series -
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 56nC @ 20V
Vgs (Max) +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 800V
FET Feature -
Power Dissipation (Max) 348W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3 Variant
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