SCT2H12NYTB
SCT2H12NYTB
Part Number SCT2H12NYTB
Description 1700V 1.2 OHM 4A SIC FET
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 1700V 4A (Tc) 44W (Tc) Surface Mount TO-268
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SCT2H12NYTB - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SCT2H12NY
Standard Package 1
Manufacturer Rohm Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.1A, 18V
Vgs(th) (Max) @ Id 4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 18V
Vgs (Max) +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds 184pF @ 800V
FET Feature -
Power Dissipation (Max) 44W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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