LSIC1MO120E0160
LSIC1MO120E0160
Part Number LSIC1MO120E0160
Description SIC MOSFET 1200V 22A TO247-3
Package / Case TO-247-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 1200V 22A (Tc) 125W (Tc) Through Hole TO-247-3
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LSIC1MO120E0160 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet LSIC1MO120E0160 Datasheet
Standard Package 450
Manufacturer Littelfuse Inc.
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 200mOhm @ 10A, 20V
Vgs(th) (Max) @ Id 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 57nC @ 20V
Vgs (Max) +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 800V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
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