LSIC1MO120E0160
LSIC1MO120E0160
Part Number LSIC1MO120E0160 Description SIC MOSFET 1200V 22A TO247-3 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1200V 22A (Tc) 125W (Tc) Through Hole TO-247-3
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LSIC1MO120E0160 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet LSIC1MO120E0160 Datasheet Standard Package 450 Manufacturer Littelfuse Inc. Series - Packaging Tube Part Status Active FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 200mOhm @ 10A, 20V Vgs(th) (Max) @ Id 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs 57nC @ 20V Vgs (Max) +22V, -6V Input Capacitance (Ciss) (Max) @ Vds 870pF @ 800V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3
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