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SCT3160KLGC11


SCT3160KLGC11

Part NumberSCT3160KLGC11

Manufacturer

Description

Datasheet

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SCT3160KLGC11 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package30
ManufacturerRohm Semiconductor
Series-
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs208mOhm @ 5A, 18V
Vgs(th) (Max) @ Id5.6V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs42nC @ 18V
Vgs (Max)+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds398pF @ 800V
FET Feature-
Power Dissipation (Max)103W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247N
Package / CaseTO-247-3

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