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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9217-75B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 4029pF @ 25V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 185°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
HUF75344P3
ON Semiconductor, N-Channel 55V 75A (Tc) 285W (Tc) Through Hole TO-220-3, UltraFET™
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BSS138K
ON Semiconductor, N-Channel 50V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23-3,
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BUK7Y3R5-40HX
Nexperia USA Inc., N-Channel 40V 120A (Ta) 115W (Ta) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101
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DMNH6021SK3Q-13
Diodes Incorporated, N-Channel 60V 50A (Tc) 2.1W (Ta) Surface Mount TO-252-4L, Automotive, AEC-Q101
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STD3N95K5AG
STMicroelectronics, N-Channel 2A (Tc) 45W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, MDmesh™ K5
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TK560P60Y,RQ
Toshiba Semiconductor and Storage, N-Channel 600V 7A (Tc) 60W (Tc) Surface Mount DPAK, DTMOSV
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NDS355N
ON Semiconductor, N-Channel 30V 1.6A (Ta) 500mW (Ta) Surface Mount SuperSOT-3,
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STP5N60M2
STMicroelectronics, N-Channel 600V 3.7A (Tc) 45W (Tc) Through Hole TO-220, MDmesh™ II Plus
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STI45N10F7
STMicroelectronics, N-Channel 100V 45A (Tc) 60W (Tc) Through Hole I2PAK (TO-262), DeepGATE™, STripFET™ VII
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TSM60NB1R4CP ROG
Taiwan Semiconductor Corporation, N-Channel 600V 3A (Tc) 28.4W (Tc) Surface Mount TO-252, (D-Pak),
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TK100E08N1,S1X
Toshiba Semiconductor and Storage, N-Channel 80V 100A (Ta) 255W (Tc) Through Hole TO-220, U-MOSVIII-H
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ZVNL110A
Diodes Incorporated, N-Channel 100V 320mA (Ta) 700mW (Ta) Through Hole TO-92-3,
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