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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDD86367_F085
Standard Package 1
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4840pF @ 40V
FET Feature -
Power Dissipation (Max) 227W (Tj)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
RHP030N03T100
Rohm Semiconductor, N-Channel 30V 3A (Ta) 500mW (Ta) Surface Mount MPT3,
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2N7002Q-7-F
Diodes Incorporated, N-Channel 60V 170mA (Ta) 370mW (Ta) Surface Mount SOT-23, Automotive, AEC-Q101
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STD8N65M5
STMicroelectronics, N-Channel 650V 7A (Tc) 70W (Tc) Surface Mount DPAK, MDmesh™ V
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IRFPG50PBF
Vishay Siliconix, N-Channel 1000V 6.1A (Tc) 190W (Tc) Through Hole TO-247-3,
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IRLB4030PBF
Infineon Technologies, N-Channel 100V 180A (Tc) 370W (Tc) Through Hole TO-220AB, HEXFET®
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RQ6E055BNTCR
Rohm Semiconductor, N-Channel 30V 5.5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95),
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TSM110NB04CR RLG
Taiwan Semiconductor Corporation, N-Channel 40V 12A (Ta), 54A (Tc) 3.1W (Ta), 68W (Tc) Surface Mount 8-PDFN (5x6),
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IPD034N06N3GATMA1
Infineon Technologies, N-Channel 60V 100A (Tc) 167W (Tc) Surface Mount PG-TO252-3, OptiMOS™
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IRFH8311TRPBF
Infineon Technologies, N-Channel 30V 32A (Ta), 169A (Tc) 3.6W (Ta), 96W (Tc) Surface Mount PQFN (5x6), HEXFET®
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NCV8440ASTT1G
ON Semiconductor, N-Channel 59V 2.6A (Ta) 1.69W (Ta) Surface Mount SOT-223,
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IXFX32N100Q3
IXYS, N-Channel 1000V 32A (Tc) 1250W (Tc) Through Hole PLUS247™-3, HiPerFET™
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STP110N10F7
STMicroelectronics, N-Channel 100V 110A (Tc) 150W (Tc) Through Hole TO-220, DeepGATE™, STripFET™ VII
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