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IRFBG30PBF

IRFBG30PBF

Part NumberIRFBG30PBF

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 1000V 3.1A TO-220AB

DatasheetIRFBG30

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB

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IRFBG30PBF - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRFBG30
Standard Package	50
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	980pF @ 25V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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