IPP023N04NGXKSA1
IPP023N04NGXKSA1
Part Number IPP023N04NGXKSA1
Description MOSFET N-CH 40V 90A TO220-3
Package / Case TO-220-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 40V 90A (Tc) 167W (Tc) Through Hole PG-TO220-3
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IPP023N04NGXKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB,IPP023N04N G
Standard Package 500
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 95µA
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10000pF @ 20V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
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