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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDB86363-F085
Standard Package 800
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10000pF @ 40V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQPF4N90C
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RCX511N25
Rohm Semiconductor, N-Channel 250V 51A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM,
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SIHD4N80E-GE3
Vishay Siliconix, N-Channel 800V 4.3A (Tc) 69W (Tc) Surface Mount D-PAK (TO-252AA),
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2SK3018T106
Rohm Semiconductor, N-Channel 30V 100mA (Ta) 200mW (Ta) Surface Mount UMT3,
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IXYS, N-Channel 850V 50A (Tc) 890W (Tc) Through Hole TO-264, HiPerFET™
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NVMFS6H801NT1G
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IRF7478TRPBF
Infineon Technologies, N-Channel 60V 7A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
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SQM120N02-1M3L_GE3
Vishay Siliconix, N-Channel 20V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak), Automotive, AEC-Q101, TrenchFET®
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SQ2398ES-T1_GE3
Vishay Siliconix, N-Channel 100V 1.6A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236), Automotive, AEC-Q101, TrenchFET®
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