Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFU710F
Standard Package	3000
Manufacturer	NXP USA Inc.
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	2.8V
Frequency - Transition	43GHz
Noise Figure (dB Typ @ f)	0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz
Gain	-
Power - Max	136mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 1mA, 2V
Current - Collector (Ic) (Max)	10mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-343F
Supplier Device Package	4-DFP
Base Part Number	BFU710

MT3S111(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 6V 100mA 11.5GHz 700mW Surface Mount S-Mini,	View
MCH4009-TL-H	ON Semiconductor, RF Transistor NPN 3.5V 40mA 25GHz 120mW Surface Mount 4-MCPH,	View
BFP640FH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.5V 50mA 40GHz 200mW Surface Mount 4-TSFP,	View
2N5770	Central Semiconductor Corp, RF Transistor NPN 15V 50mA 900MHz 625mW Through Hole TO-92,	View
BFR360L3E6765XTMA1	Infineon Technologies, RF Transistor NPN 9V 35mA 14GHz 210mW Surface Mount PG-TSLP-3-1,	View
MT3S16U(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5V 60mA 4GHz 100mW Surface Mount USM,	View
2SC5490A-TL-H	ON Semiconductor, RF Transistor NPN 10V 30mA 8GHz 100mW Surface Mount 3-SSFP,	View
ON5088,115	NXP USA Inc., RF Transistor NPN 10V 40mA 55GHz 136mW Surface Mount 4-DFP,	View
MT3S111P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 6V 100mA 8GHz 1W Surface Mount PW-MINI,	View
BFR193WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT323-3,	View
BFP843FH6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 55mA 125mW Surface Mount TSFP-4-1,	View
PH2729-25M	M/A-Com Technology Solutions, RF Transistor NPN 60V 4A 70W Chassis Mount,	View

BFU710F,115

Part NumberBFU710F,115