Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S111
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	6V
Frequency - Transition	11.5GHz
Noise Figure (dB Typ @ f)	1.2dB @ 1GHz
Gain	12dB
Power - Max	700mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

BFR193L3E6327XTMA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-TSLP-3-1,	View
BFU730LXZ	NXP USA Inc., RF Transistor NPN 3V 30mA 53GHz 160mW Surface Mount 3-DFN1006 (1.0x0.6),	View
HFA3102BZ96	Renesas Electronics America Inc., RF Transistor 6 NPN 12V 30mA 10GHz 250mW Surface Mount 14-SOIC,	View
BFR182E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 35mA 8GHz 250mW Surface Mount SOT-23-3,	View
BFP843FH6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 55mA 125mW Surface Mount TSFP-4-1,	View
2SC5490A-TL-H	ON Semiconductor, RF Transistor NPN 10V 30mA 8GHz 100mW Surface Mount 3-SSFP,	View
BFP740FH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 30mA 42GHz 160mW Surface Mount 4-TSFP,	View
BFR193L3E6327XTMA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-TSLP-3-1,	View
BFP460H6327XTSA1	Infineon Technologies, RF Transistor NPN 5.8V 70mA 22GHz 230mW Surface Mount PG-SOT343-4,	View
BFR340FH6327XTSA1	Infineon Technologies, RF Transistor NPN 9V 20mA 14GHz 75mW Surface Mount PG-TSFP-3,	View
2SC2714-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount S-Mini,	View
PBR941,215	NXP USA Inc., RF Transistor NPN 10V 50mA 8GHz 360mW Surface Mount TO-236AB (SOT23),	View

MT3S111(TE85L,F)

Part NumberMT3S111(TE85L,F)