Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S111
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	6V
Frequency - Transition	11.5GHz
Noise Figure (dB Typ @ f)	1.2dB @ 1GHz
Gain	12dB
Power - Max	700mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

MMBTH10LT1G	ON Semiconductor, RF Transistor NPN 25V 650MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
BFP640ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 50mA 46GHz 200mW Surface Mount SOT-343,	View
BFP540H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 80mA 30GHz 250mW Surface Mount PG-SOT343-4,	View
BFR181E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 20mA 8GHz 175mW Surface Mount SOT-23-3,	View
BFU590QX	NXP USA Inc., RF Transistor NPN 12V 200mA 8GHz 2W Surface Mount SOT-89-3,	View
BFT25,215	NXP USA Inc., RF Transistor NPN 5V 6.5mA 2.3GHz 30mW Surface Mount TO-236AB (SOT23),	View
MMBTH10-4LT1G	ON Semiconductor, RF Transistor NPN 25V 800MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
BFQ18A,115	NXP USA Inc., RF Transistor NPN 18V 150mA 4GHz 1W Surface Mount SOT-89-3,	View
2SC5095-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 10V 15mA 10GHz 100mW Surface Mount SC-70,	View
SS9018HBU	ON Semiconductor, RF Transistor NPN 15V 50mA 1.1GHz 400mW Through Hole TO-92-3,	View
BFU690F,115	NXP USA Inc., RF Transistor NPN 5.5V 100mA 18GHz 230mW Surface Mount 4-DFP,	View
BFP420FH6327XTSA1	Infineon Technologies, RF Transistor NPN 5.5V 35mA 25GHz 160mW Surface Mount 4-TSFP,	View

MT3S111(TE85L,F)

Part NumberMT3S111(TE85L,F)