Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S111P
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	6V
Frequency - Transition	8GHz
Noise Figure (dB Typ @ f)	1.25dB @ 1GHz
Gain	10.5dB
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	PW-MINI

BFU520WX	NXP USA Inc., RF Transistor NPN 12V 30mA 10GHz 450mW Surface Mount SOT-323-3, Automotive, AEC-Q101	View
2SC5226A-5-TL-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 150mW Surface Mount 3-MCP,	View
BFY90	Central Semiconductor Corp, RF Transistor NPN 15V 25mA 1.4GHz 200mW Through Hole TO-72,	View
BFP420H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 35mA 25GHz 160mW Surface Mount SOT-343,	View
BFR183E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 65mA 8GHz 450mW Surface Mount SOT-23-3,	View
MMBTH10-7-F	Diodes Incorporated, RF Transistor NPN 25V 50mA 650MHz 300mW Surface Mount SOT-23-3,	View
2SC5086-O,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount SSM,	View
2SC5226A-5-TL-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 150mW Surface Mount 3-MCP,	View
2N4427	Central Semiconductor Corp, RF Transistor NPN 20V 400mA 500MHz 1W Through Hole TO-39,	View
MMBTH10-4LT1G	ON Semiconductor, RF Transistor NPN 25V 800MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
KST10MTF	ON Semiconductor, RF Transistor NPN 25V 650MHz 350mW Surface Mount SOT-23-3,	View
BFR740L3RHE6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 30mA 42GHz 160mW Surface Mount PG-TSLP-3,	View

MT3S111P(TE12L,F)

Part NumberMT3S111P(TE12L,F)