Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	RF Discretes Selection Guide
Standard Package	1
Manufacturer	Infineon Technologies
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5V
Frequency - Transition	24GHz
Noise Figure (dB Typ @ f)	1.25dB @ 1.8GHz
Gain	15.5dB
Power - Max	450mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 50mA, 4V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-82A, SOT-343
Supplier Device Package	PG-SOT343-4
Base Part Number	BFP450

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BF776H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 50mA 46GHz 200mW Surface Mount PG-SOT343-4,	View
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MT3S20TU(TE85L)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 900mW Surface Mount UFM,	View

BFP450H6327XTSA1

Part NumberBFP450H6327XTSA1