Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	RF Discretes Selection Guide
Standard Package	3000
Manufacturer	Infineon Technologies
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5V
Frequency - Transition	30GHz
Noise Figure (dB Typ @ f)	0.9dB ~ 1.4dB @ 1.8GHz
Gain	20dB
Power - Max	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 20mA, 3.5V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	4-SMD, Flat Leads
Supplier Device Package	4-TSFP
Base Part Number	BFP540

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2SC5066-O,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount SSM,	View
2SC5488A-TL-H	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 100mW Surface Mount 3-SSFP,	View
2SC5085-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount USM,	View
MMBT918LT1G	ON Semiconductor, RF Transistor NPN 15V 50mA 600MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
BFS17WH6327XTSA1	Infineon Technologies, RF Transistor NPN 15V 25mA 1.4GHz 280mW Surface Mount PG-SOT323-3,	View
BFP196WNH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 150mA 7.5GHz 700mW Surface Mount PG-SOT343-4,	View

BFP540FESDH6327XTSA1

Part NumberBFP540FESDH6327XTSA1