Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	SS9018
Standard Package	10000
Manufacturer	ON Semiconductor
Series	-
Packaging	Bulk
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	1.1GHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	400mW
DC Current Gain (hFE) (Min) @ Ic, Vce	97 @ 1mA, 5V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3

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BFS17PE6327HTSA1	Infineon Technologies, RF Transistor NPN 15V 25mA 1.4GHz 280mW Surface Mount SOT-23-3,	View
SS9018GBU	ON Semiconductor, RF Transistor NPN 15V 50mA 1.1GHz 400mW Through Hole TO-92-3,	View
55GN01CA-TB-E	ON Semiconductor, RF Transistor NPN 10V 70mA 4.5GHz 200mW Surface Mount 3-CP,	View
BFP620FH7764XTSA1	Infineon Technologies, RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount 4-TSFP,	View
BFT25A,215	NXP USA Inc., RF Transistor NPN 5V 6.5mA 5GHz 32mW Surface Mount TO-236AB (SOT23),	View
BFU660F,115	NXP USA Inc., RF Transistor NPN 5.5V 60mA 21GHz 225mW Surface Mount 4-DFP,	View
BFR193FH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-TSFP-3,	View
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MMBTH11	ON Semiconductor, RF Transistor NPN 25V 50mA 650MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
2N5179	Central Semiconductor Corp, RF Transistor NPN 12V 50mA 2GHz 200mW Through Hole TO-72,	View

SS9018HBU

Part NumberSS9018HBU