Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	SS9018
Standard Package	10000
Manufacturer	ON Semiconductor
Series	-
Packaging	Bulk
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	1.1GHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	400mW
DC Current Gain (hFE) (Min) @ Ic, Vce	97 @ 1mA, 5V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3

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MMBTH10LT1G	ON Semiconductor, RF Transistor NPN 25V 650MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
2SC5095-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 10V 15mA 10GHz 100mW Surface Mount SC-70,	View
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SS9018HBU

Part NumberSS9018HBU