Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR418DP-T1-GE3

SIR418DP-T1-GE3

SIR418DP-T1-GE3

Part NumberSIR418DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 40A PPAK SO-8

DatasheetSIR418DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 40A (Tc) 39W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR418DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR418DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR418DP-T1-GE3.
We are offering SIR418DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR418DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR418DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2410pF @ 20V
FET Feature	-
Power Dissipation (Max)	39W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR418DP-T1-GE3 - Related Products

	SI7190DP-T1-GE3	Vishay Siliconix, N-Channel 250V 18.4A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	ZXMN6A08E6TA	Diodes Incorporated, N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26,	View
	ZXMN2F30FHTA	Diodes Incorporated, N-Channel 20V 4.1A (Ta) 960mW (Ta) Surface Mount SOT-23-3,	View
	FDB9406-F085	ON Semiconductor, N-Channel 40V 110A (Tc) 176W (Tj) Surface Mount D²PAK (TO-263), Automotive, AEC-Q101, PowerTrench®	View
	IPB019N08N3GATMA1	Infineon Technologies, N-Channel 80V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7, OptiMOS™	View
	SISA10DN-T1-GE3	Vishay Siliconix, N-Channel 30V 30A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IRFS7534TRL7PP	Infineon Technologies, N-Channel 60V 240A (Tc) 290W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®, StrongIRFET™	View
	SI4408DY-T1-E3	Vishay Siliconix, N-Channel 20V 14A (Ta) 1.6W (Ta) Surface Mount 8-SO, TrenchFET®	View
	SQM200N04-1M1L_GE3	Vishay Siliconix, N-Channel 40V 200A (Tc) 375W (Tc) Surface Mount TO-263-7, TrenchFET®	View
	IRFBC20SPBF	Vishay Siliconix, N-Channel 600V 2.2A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount D2PAK,	View
	FCB20N60TM	ON Semiconductor, N-Channel 600V 20A (Tc) 208W (Tc) Surface Mount D²PAK, SuperFET™	View
	BUK9Y07-30B,115	Nexperia USA Inc., N-Channel 30V 75A (Tc) 105W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View

SIR418DP-T1-GE3 - Tags

SIR418DP-T1-GE3 SIR418DP-T1-GE3 PDF SIR418DP-T1-GE3 datasheet SIR418DP-T1-GE3 specification SIR418DP-T1-GE3 image SIR418DP-T1-GE3 India Renesas Electronics India SIR418DP-T1-GE3 buy SIR418DP-T1-GE3 SIR418DP-T1-GE3 price SIR418DP-T1-GE3 distributor SIR418DP-T1-GE3 supplier SIR418DP-T1-GE3 wholesales