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IPB020N04NGATMA1


IPB020N04NGATMA1

Part NumberIPB020N04NGATMA1

Manufacturer

Description

Datasheet

Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IPB020N04NGATMA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesOptiMOS™
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C140A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 95µA
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9700pF @ 20V
FET Feature-
Power Dissipation (Max)167W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7-3
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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