TN5335K1-G
TN5335K1-G
Part Number TN5335K1-G Description MOSFET N-CH 350V 0.11A SOT23-3 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 350V 110mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)
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TN5335K1-G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TN5335 Standard Package 3000 Manufacturer Microchip Technology Series - Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 350V Current - Continuous Drain (Id) @ 25°C 110mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 3V, 10V Rds On (Max) @ Id, Vgs 15Ohm @ 200mA, 10V Vgs(th) (Max) @ Id 2V @ 1mA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 110pF @ 25V FET Feature - Power Dissipation (Max) 360mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 (TO-236AB) Package / Case TO-236-3, SC-59, SOT-23-3
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