VS-FB190SA10

Part NumberVS-FB190SA10

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	VS-FB190SA10
Standard Package	10
Manufacturer	Vishay Semiconductor Diodes Division
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	190A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	6.5mOhm @ 180A, 10V
Vgs(th) (Max) @ Id	4.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	250nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10700pF @ 25V
FET Feature	-
Power Dissipation (Max)	568W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227
Package / Case	SOT-227-4, miniBLOC

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