Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA445EDJT-T1-GE3

SIA445EDJT-T1-GE3

SIA445EDJT-T1-GE3

Part NumberSIA445EDJT-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 12A SC70-6

DatasheetSIA445EDJT

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA445EDJT-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA445EDJT-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA445EDJT-T1-GE3.
We are offering SIA445EDJT-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA445EDJT-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA445EDJT
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	16.7mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	69nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	2180pF @ 10V
FET Feature	-
Power Dissipation (Max)	19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA445EDJT-T1-GE3 - Related Products

	NTR1P02T1G	ON Semiconductor, P-Channel 20V 1A (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236),	View
	NVR1P02T1G	ON Semiconductor, P-Channel 20V 1A (Ta) 400mW (Ta) Surface Mount SOT-23-3,	View
	DMG2301LK-7	Diodes Incorporated, P-Channel 20V 2.4A (Ta) 840mW (Ta) Surface Mount SOT-23, Automotive, AEC-Q101	View
	MTM981400BBF	Panasonic Electronic Components, P-Channel 40V 7A (Ta) 2W (Ta) Surface Mount SO8-F1-B,	View
	SI7135DP-T1-GE3	Vishay Siliconix, P-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SI1077X-T1-GE3	Vishay Siliconix, P-Channel 20V 330mW (Ta) Surface Mount SC-89-6, TrenchFET®	View
	NX3008PBKW,115	Nexperia USA Inc., P-Channel 30V 200mA (Ta) 260mW (Ta), 830mW (Tc) Surface Mount SC-70, Automotive, AEC-Q101, TrenchMOS™	View
	SI4421DY-T1-GE3	Vishay Siliconix, P-Channel 20V 10A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	SQD19P06-60L_T4GE3	Vishay Siliconix, P-Channel 60V 20A (Tc) 46W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View
	PMZ350UPEYL	Nexperia USA Inc., P-Channel 20V 1A (Ta) 360mW (Ta), 3.125W (Tc) Surface Mount DFN1006-3,	View
	CSD25485F5T	Texas Instruments, P-Channel 20V 5.3A (Ta) 1.4W (Ta) Surface Mount 3-PICOSTAR, FemtoFET™	View
	SI2301CDS-T1-GE3	Vishay Siliconix, P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View

SIA445EDJT-T1-GE3 - Tags

SIA445EDJT-T1-GE3 SIA445EDJT-T1-GE3 PDF SIA445EDJT-T1-GE3 datasheet SIA445EDJT-T1-GE3 specification SIA445EDJT-T1-GE3 image SIA445EDJT-T1-GE3 India Renesas Electronics India SIA445EDJT-T1-GE3 buy SIA445EDJT-T1-GE3 SIA445EDJT-T1-GE3 price SIA445EDJT-T1-GE3 distributor SIA445EDJT-T1-GE3 supplier SIA445EDJT-T1-GE3 wholesales