Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA429DJT-T1-GE3

SIA429DJT-T1-GE3

SIA429DJT-T1-GE3

Part NumberSIA429DJT-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 12A SC-70

DatasheetSiA429DJT

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA429DJT-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA429DJT-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA429DJT-T1-GE3.
We are offering SIA429DJT-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA429DJT-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiA429DJT
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	20.5mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	62nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1750pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA429DJT-T1-GE3 - Related Products

	BSS84-HF	Comchip Technology, P-Channel 50V 130mA (Ta) 225mW (Ta) Surface Mount SOT-23-3,	View
	IRFR9024NTRPBF	Infineon Technologies, P-Channel 55V 11A (Tc) 38W (Tc) Surface Mount D-Pak, HEXFET®	View
	NX3008PBK,215	Nexperia USA Inc., P-Channel 30V 230mA (Ta) 350mW (Ta), 1.14W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101, TrenchMOS™	View
	TSM3481CX6 RFG	Taiwan Semiconductor Corporation, P-Channel 30V 5.7A (Ta) 1.6W (Ta) Surface Mount SOT-26,	View
	SI3443DDV-T1-GE3	Vishay Siliconix, P-Channel 20V 4A (Ta), 5.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	SI7113DN-T1-E3	Vishay Siliconix, P-Channel 100V 13.2A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	FDMC5614P	ON Semiconductor, P-Channel 60V 5.7A (Ta), 13.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	NTS4173PT1G	ON Semiconductor, P-Channel 30V 1.2A (Ta) 290mW (Ta) Surface Mount SC-70-3 (SOT323),	View
	DMP31D0UFB4-7B	Diodes Incorporated, P-Channel 30V 540mA (Ta) 460mW (Ta) Surface Mount X2-DFN1006-3,	View
	BSS84	ON Semiconductor, P-Channel 50V 130mA (Ta) 360mW (Ta) Surface Mount SOT-23-3,	View
	CPH3350-TL-W	ON Semiconductor, P-Channel 20V 3A (Ta) 1W (Ta) Surface Mount 3-CPH,	View
	FQP3P50	ON Semiconductor, P-Channel 500V 2.7A (Tc) 85W (Tc) Through Hole TO-220-3, QFET®	View

SIA429DJT-T1-GE3 - Tags

SIA429DJT-T1-GE3 SIA429DJT-T1-GE3 PDF SIA429DJT-T1-GE3 datasheet SIA429DJT-T1-GE3 specification SIA429DJT-T1-GE3 image SIA429DJT-T1-GE3 India Renesas Electronics India SIA429DJT-T1-GE3 buy SIA429DJT-T1-GE3 SIA429DJT-T1-GE3 price SIA429DJT-T1-GE3 distributor SIA429DJT-T1-GE3 supplier SIA429DJT-T1-GE3 wholesales