SI4463BDY-T1-E3
SI4463BDY-T1-E3
Part Number SI4463BDY-T1-E3 Description MOSFET P-CH 20V 9.8A 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount 8-SO
To learn about the specification of SI4463BDY-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4463BDY-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4463BDY-T1-E3.
We are offering SI4463BDY-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI4463BDY-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4463BDY Standard Package 2500 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 9.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 11mOhm @ 13.7A, 10V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 4.5V Vgs (Max) ±12V FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
SI4463BDY-T1-E3 - Related ProductsMore >>
BSR315PH6327XTSA1 Infineon Technologies, P-Channel 60V 620mA (Ta) 500mW (Ta) Surface Mount PG-SC-59, SIPMOS®
View
RW1E025RPT2CR Rohm Semiconductor, P-Channel 30V 2.5A (Ta) 700mW (Ta) Surface Mount 6-WEMT,
View
BSH203,215 Nexperia USA Inc., P-Channel 30V 470mA (Ta) 417mW (Ta) Surface Mount TO-236AB,
View
RD3P130SPTL1 Rohm Semiconductor, P-Channel 100V 13A (Ta) 20W (Tc) Surface Mount TO-252,
View
DMP2039UFDE4-7 Diodes Incorporated, P-Channel 25V 7.3A (Ta) 690mW (Ta) Surface Mount 6-DFN2020 (2x2),
View
SQD50P04-13L_GE3 Vishay Siliconix, P-Channel 40V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
View
SIR167DP-T1-GE3 Vishay Siliconix, P-Channel 30V 60A (Tc) 65.8W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen III
View
SI7141DP-T1-GE3 Vishay Siliconix, P-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
TSM500P02CX RFG Taiwan Semiconductor Corporation, P-Channel 20V 4.7A (Tc) 1.56W (Tc) Surface Mount SOT-23,
View
SSM3J15FU,LF Toshiba Semiconductor and Storage, P-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount USM, π-MOSVI
View
BSS84-7-F Diodes Incorporated, P-Channel 50V 130mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,
View
ZXMP10A17E6QTA Diodes Incorporated, P-Channel 100V 1.3A (Ta) 1.1W (Ta) Surface Mount SOT-26,
View
SI4463BDY-T1-E3 - Tags
English
