Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQS401ENW-T1_GE3

SQS401ENW-T1_GE3

SQS401ENW-T1_GE3

Part NumberSQS401ENW-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 40V 16A POWERPAK1212

DatasheetSQS401ENW

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 40V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SQS401ENW-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQS401ENW-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQS401ENW-T1_GE3.
We are offering SQS401ENW-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQS401ENW-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQS401ENW
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	29mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21.2nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1875pF @ 20V
FET Feature	-
Power Dissipation (Max)	62.5W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SQS401ENW-T1_GE3 - Related Products

	CSD23280F3T	Texas Instruments, P-Channel 12V 1.8A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™	View
	NTLUS3A90PZTAG	ON Semiconductor, P-Channel 20V 2.6A (Ta) 600mW (Ta) Surface Mount 6-UDFN (1.6x1.6), µCool™	View
	DMG7401SFGQ-7	Diodes Incorporated, P-Channel 30V 9.8A (Ta) 940mW (Ta) Surface Mount PowerDI3333-8,	View
	NTR4101PT1H	ON Semiconductor, P-Channel 20V 1.8A (Ta) 420mW (Ta) Surface Mount SOT-23-3,	View
	IRFR9024TRLPBF	Vishay Siliconix, P-Channel 60V 8.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	SI4485DY-T1-GE3	Vishay Siliconix, P-Channel 30V 6A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®	View
	IRFR9014TRLPBF	Vishay Siliconix, P-Channel 60V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
	SSM3J65CTC,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 700mA (Ta) 500mW (Ta) Surface Mount CST3C, U-MOSVII	View
	CSD25501F3T	Texas Instruments, P-Channel 20V 3.6A (Ta) 500mW (Ta) Surface Mount 3-LGA (0.73x0.64), FemtoFET™	View
	DMP45H21DHE-13	Diodes Incorporated, P-Channel 450V 600mA (Tc) 12.5W (Tc) Surface Mount SOT-223,	View
	SSM3J35CTC,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 250mA (Ta) 500mW (Ta) Surface Mount CST3C, U-MOSVII	View
	IRF9Z34STRRPBF	Vishay Siliconix, P-Channel 60V 18A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D2PAK,	View

SQS401ENW-T1_GE3 - Tags

SQS401ENW-T1_GE3 SQS401ENW-T1_GE3 PDF SQS401ENW-T1_GE3 datasheet SQS401ENW-T1_GE3 specification SQS401ENW-T1_GE3 image SQS401ENW-T1_GE3 India Renesas Electronics India SQS401ENW-T1_GE3 buy SQS401ENW-T1_GE3 SQS401ENW-T1_GE3 price SQS401ENW-T1_GE3 distributor SQS401ENW-T1_GE3 supplier SQS401ENW-T1_GE3 wholesales