Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4464DY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	240mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

IRLD120PBF	Vishay Siliconix, N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,	View
IRFS7434TRLPBF	Infineon Technologies, N-Channel 40V 195A (Tc) 294W (Tc) Surface Mount D2PAK, HEXFET®, StrongIRFET™	View
SIHB100N60E-GE3	Vishay Siliconix, N-Channel 600V 30A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263),	View
SI2356DS-T1-GE3	Vishay Siliconix, N-Channel 40V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount TO-236, TrenchFET®	View
FDP3652	ON Semiconductor, N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Through Hole TO-220-3, PowerTrench®	View
FQP22N30	ON Semiconductor, N-Channel 300V 21A (Tc) 170W (Tc) Through Hole TO-220-3, QFET®	View
TSM240N03CX RFG	Taiwan Semiconductor Corporation, N-Channel 30V 6.5A (Tc) 1.56W (Tc) Surface Mount SOT-23,	View
FDS6570A	ON Semiconductor, N-Channel 20V 15A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
RF4E110GNTR	Rohm Semiconductor, N-Channel 30V 11A (Ta) 2W (Ta) Surface Mount HUML2020L8,	View
STP10N60M2	STMicroelectronics, N-Channel 600V 7.5A (Tc) 85W (Tc) Through Hole TO-220, MDmesh™ II Plus	View
TK39N60W5,S1VF	Toshiba Semiconductor and Storage, N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole TO-247, DTMOSIV	View
FDPF12N50NZ	ON Semiconductor, N-Channel 500V 11.5A (Tc) 42W (Tc) Through Hole TO-220F, UniFET-II™	View

SI4464DY-T1-E3

Part NumberSI4464DY-T1-E3