SI2356DS-T1-GE3
SI2356DS-T1-GE3
Part Number SI2356DS-T1-GE3 Description MOSFET N-CH 40V 4.3A SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 40V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount TO-236
To learn about the specification of SI2356DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2356DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2356DS-T1-GE3.
We are offering SI2356DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2356DS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2356DS Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 51mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 370pF @ 20V FET Feature - Power Dissipation (Max) 960mW (Ta), 1.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236 Package / Case TO-236-3, SC-59, SOT-23-3
SI2356DS-T1-GE3 - Related ProductsMore >>
2V7002LT3G ON Semiconductor, N-Channel 60V 115mA (Tc) 225mW (Ta) Surface Mount SOT-23-3 (TO-236), Automotive, AEC-Q101
View
IRLTS6342TRPBF Infineon Technologies, N-Channel 30V 8.3A (Ta) 2W (Ta) Surface Mount 6-TSOP, HEXFET®
View
FQPF5N90 ON Semiconductor, N-Channel 900V 3A (Tc) 51W (Tc) Through Hole TO-220F, QFET®
View
IRF2807ZPBF Infineon Technologies, N-Channel 75V 75A (Tc) 170W (Tc) Through Hole TO-220AB, HEXFET®
View
IPD60R380P6ATMA1 Infineon Technologies, N-Channel 600V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P6
View
PSMN059-150Y,115 Nexperia USA Inc., N-Channel 150V 43A (Tc) 113W (Tc) Surface Mount LFPAK56, Power-SO8,
View
STP55NF06FP STMicroelectronics, N-Channel 60V 50A (Tc) 30W (Tc) Through Hole TO-220FP, STripFET™ II
View
FDB110N15A ON Semiconductor, N-Channel 150V 92A (Tc) 234W (Tc) Surface Mount D²PAK, PowerTrench®
View
IRLML0060TRPBF Infineon Technologies, N-Channel 60V 2.7A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
View
RSS070N05FRATB Rohm Semiconductor, N-Channel 45V 7A (Ta) 2W (Ta) Surface Mount 8-SOP, Automotive, AEC-Q101
View
PSMN4R5-40PS,127 Nexperia USA Inc., N-Channel 40V 100A (Tc) 148W (Tc) Through Hole TO-220AB,
View
STP7N80K5 STMicroelectronics, N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-220, SuperMESH5™
View
SI2356DS-T1-GE3 - Tags
English
