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FDP3652

FDP3652

Part NumberFDP3652

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 100V 61A TO-220AB

DatasheetFDB3652, FDP3652

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Through Hole TO-220-3

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FDP3652 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDB3652, FDP3652
Standard Package	800
Manufacturer	ON Semiconductor
Series	PowerTrench®
Packaging	Bulk
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	16mOhm @ 61A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	53nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2880pF @ 25V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

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