Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB100N60E-GE3

SIHB100N60E-GE3

SIHB100N60E-GE3

Part NumberSIHB100N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET E SERIES 600V D2PAK (TO-2

DatasheetSIHB100N60E

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 30A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)

To learn about the specification of SIHB100N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB100N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB100N60E-GE3.
We are offering SIHB100N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB100N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHB100N60E
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	E
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	100mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1851pF @ 100V
FET Feature	-
Power Dissipation (Max)	208W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB100N60E-GE3 - Related Products

	STB35NF10T4	STMicroelectronics, N-Channel 100V 40A (Tc) 115W (Tc) Surface Mount D2PAK, STripFET™ II	View
	SIHP12N60E-GE3	Vishay Siliconix, N-Channel 600V 12A (Tc) 147W (Tc) Through Hole TO-220AB,	View
	NTMFS4833NT1G	ON Semiconductor, N-Channel 30V 16A (Ta), 156A (Tc) 910mW (Ta), 125W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	STP76NF75	STMicroelectronics, N-Channel 75V 80A (Tc) 300W (Tc) Through Hole TO-220, STripFET™ II	View
	BUK7Y3R0-40HX	Nexperia USA Inc., N-Channel 40V 120A (Ta) 172W (Ta) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101	View
	BSZ065N03LSATMA1	Infineon Technologies, N-Channel 30V 12A (Ta), 40A (Tc) 2.1W (Ta), 26W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™	View
	FQPF8N60C	ON Semiconductor, N-Channel 600V 7.5A (Tc) 48W (Tc) Through Hole TO-220F, QFET®	View
	BSH111BKR	Nexperia USA Inc., N-Channel 55V 210mA (Ta) 302mW (Ta) Surface Mount TO-236AB,	View
	2N7002BKVL	Nexperia USA Inc., N-Channel 60V 350mA (Ta) 370mW (Ta) Surface Mount TO-236AB, Automotive, AEC-Q101, TrenchMOS™	View
	FCPF7N60NT	ON Semiconductor, N-Channel 600V 6.8A (Tc) 30.5W (Tc) Through Hole TO-220F, SupreMOS™	View
	STW9NK95Z	STMicroelectronics, N-Channel 950V 7A (Tc) 160W (Tc) Through Hole TO-247, SuperMESH™	View
	SI4850EY-T1-E3	Vishay Siliconix, N-Channel 60V 6A (Ta) 1.7W (Ta) Surface Mount 8-SO, TrenchFET®	View

SIHB100N60E-GE3 - Tags

SIHB100N60E-GE3 SIHB100N60E-GE3 PDF SIHB100N60E-GE3 datasheet SIHB100N60E-GE3 specification SIHB100N60E-GE3 image SIHB100N60E-GE3 India Renesas Electronics India SIHB100N60E-GE3 buy SIHB100N60E-GE3 SIHB100N60E-GE3 price SIHB100N60E-GE3 distributor SIHB100N60E-GE3 supplier SIHB100N60E-GE3 wholesales