STP10N60M2
STP10N60M2
Part Number STP10N60M2
Description MOSFET N-CH 600V TO-220
Package / Case TO-220-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 7.5A (Tc) 85W (Tc) Through Hole TO-220
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STP10N60M2 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STx10N60M2
Standard Package 50
Manufacturer STMicroelectronics
Series MDmesh™ II Plus
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.5nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 100V
FET Feature -
Power Dissipation (Max) 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
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