Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2399DS-T1-GE3

SI2399DS-T1-GE3

SI2399DS-T1-GE3

Part NumberSI2399DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 6A SOT-23

DatasheetSI2399DS-T1-GE3

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2399DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2399DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2399DS-T1-GE3.
We are offering SI2399DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2399DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2399DS-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	34mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 4.5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	835pF @ 10V
FET Feature	-
Power Dissipation (Max)	2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2399DS-T1-GE3 - Related Products

	DMP31D0UFB4-7B	Diodes Incorporated, P-Channel 30V 540mA (Ta) 460mW (Ta) Surface Mount X2-DFN1006-3,	View
	STS5P3LLH6	STMicroelectronics, P-Channel 30V 5A (Ta) 2.7W (Ta) Surface Mount 8-SO, DeepGATE™, STripFET™ H6	View
	IRLMS6702TRPBF	Infineon Technologies, P-Channel 20V 2.4A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®	View
	IRF5803TRPBF	Infineon Technologies, P-Channel 40V 3.4A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®	View
	BSS84PH6433XTMA1	Infineon Technologies, P-Channel 60V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®	View
	ZXMP10A18KTC	Diodes Incorporated, P-Channel 100V 3.8A (Ta) 2.17W (Ta) Surface Mount TO-252-3,	View
	SUD19P06-60L-E3	Vishay Siliconix, P-Channel 60V 19A (Tc) 2.7W (Ta), 46W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	ZXMP3A13FTA	Diodes Incorporated, P-Channel 30V 1.4A (Ta) 625mW (Ta) Surface Mount SOT-23-3,	View
	RRR030P03TL	Rohm Semiconductor, P-Channel 30V 3A (Ta) 1W (Ta) Surface Mount TSMT3,	View
	IRFR9220TRPBF	Vishay Siliconix, P-Channel 200V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	SIUD401ED-T1-GE3	Vishay Siliconix, P-Channel 30V 500mA (Ta) 1.25W (Ta) Surface Mount PowerPAK® 0806, TrenchFET® Gen III	View
	SIA485DJ-T1-GE3	Vishay Siliconix, P-Channel 150V 1.6A (Tc) 15.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single,	View

SI2399DS-T1-GE3 - Tags

SI2399DS-T1-GE3 SI2399DS-T1-GE3 PDF SI2399DS-T1-GE3 datasheet SI2399DS-T1-GE3 specification SI2399DS-T1-GE3 image SI2399DS-T1-GE3 India Renesas Electronics India SI2399DS-T1-GE3 buy SI2399DS-T1-GE3 SI2399DS-T1-GE3 price SI2399DS-T1-GE3 distributor SI2399DS-T1-GE3 supplier SI2399DS-T1-GE3 wholesales