SI2301BDS-T1-GE3
SI2301BDS-T1-GE3
Part Number SI2301BDS-T1-GE3 Description MOSFET P-CH 20V 2.2A SOT23-3 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2301BDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2301BDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2301BDS-T1-GE3.
We are offering SI2301BDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2301BDS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2301BDS Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 100mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 375pF @ 6V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
SI2301BDS-T1-GE3 - Related ProductsMore >>
IRFR5410TRPBF Infineon Technologies, P-Channel 100V 13A (Tc) 66W (Tc) Surface Mount D-Pak, HEXFET®
View
ZXMP10A17GQTA Diodes Incorporated, P-Channel 100V 2.4A (Ta) 2W (Ta) Surface Mount SOT-223, Automotive, AEC-Q101
View
SI7461DP-T1-GE3 Vishay Siliconix, P-Channel 60V 8.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
DMP1080UCB4-7 Diodes Incorporated, P-Channel 12V 3.3A (Ta) 820mW (Ta) Surface Mount U-WLB1010-4,
View
BSH202,215 Nexperia USA Inc., P-Channel 30V 520mA (Ta) 417mW (Ta) Surface Mount TO-236AB,
View
BSH205G2R Nexperia USA Inc., P-Channel 20V 2A (Ta) 480mW (Ta) Surface Mount TO-236AB,
View
SSM3J351R,LF Toshiba Semiconductor and Storage, P-Channel 60V 3.5A (Ta) 2W (Ta) Surface Mount SOT-23F, U-MOSVI
View
IRFR9214TRPBF Vishay Siliconix, P-Channel 250V 2.7A (Tc) 50W (Tc) Surface Mount DPAK,
View
SI2315BDS-T1-E3 Vishay Siliconix, P-Channel 12V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
FJ4B01120L1 Panasonic Electronic Components, P-Channel 12V 2.6A (Ta) 370mW (Ta) Surface Mount ULGA004-W-1010-RA01,
View
BSL307SPH6327XTSA1 Infineon Technologies, P-Channel 30V 5.5A (Ta) 2W (Ta) Surface Mount PG-TSOP-6-1, OptiMOS™
View
NTR4101PT1H ON Semiconductor, P-Channel 20V 1.8A (Ta) 420mW (Ta) Surface Mount SOT-23-3,
View
SI2301BDS-T1-GE3 - Tags
English
