SISS65DN-T1-GE3
SISS65DN-T1-GE3
Part Number SISS65DN-T1-GE3
Description MOSFET P-CHAN 30V PPAK 1212-8S
Package / Case PowerPAK® 1212-8S
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 30V 25.9A (Ta), 94A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
To learn about the specification of SISS65DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS65DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS65DN-T1-GE3.
We are offering SISS65DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SISS65DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SISS65DN
Standard Package 3000
Manufacturer Vishay Siliconix
Series TrenchFET® Gen III
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 25.9A (Ta), 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 138nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4930pF @ 15V
FET Feature -
Power Dissipation (Max) 5.1W (Ta), 65.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S (3.3x3.3)
Package / Case PowerPAK® 1212-8S
SISS65DN-T1-GE3 - Related ProductsMore >>
RTR025P02TL
Rohm Semiconductor, P-Channel 20V 2.5A (Ta) 1W (Ta) Surface Mount TSMT3,
View
DMP2004TK-7
Diodes Incorporated, P-Channel 20V 430mA (Ta) 150mW (Ta) Surface Mount SOT-523,
View
ZXMP6A17E6QTA
Diodes Incorporated, P-Channel 60V 2.3A (Ta) 1.1W (Ta) Surface Mount SOT-26,
View
FQPF9P25
ON Semiconductor, P-Channel 250V 6A (Tc) 50W (Tc) Through Hole TO-220F, QFET®
View
SI3469DV-T1-E3
Vishay Siliconix, P-Channel 20V 5A (Ta) 1.14W (Ta) Surface Mount 6-TSOP, TrenchFET®
View
STD35P6LLF6
STMicroelectronics, P-Channel 60V 35A (Tc) 70W (Tc) Surface Mount DPAK, STripFET™ F6
View
SI3421DV-T1-GE3
Vishay Siliconix, P-Channel 30V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP, TrenchFET®
View
STL9P3LLH6
STMicroelectronics, P-Channel 30V 9A (Tc) 3W (Ta) Surface Mount PowerFlat™ (3.3x3.3), STripFET™ H6
View
BVSS84LT1G
ON Semiconductor, P-Channel 50V 130mA (Ta) 225mW (Ta) Surface Mount SOT-23-3,
View
PMN30XPX
Nexperia USA Inc., P-Channel 20V 5.2A (Ta) 550mW (Ta), 6.25W (Tc) Surface Mount 6-TSOP,
View
SI7317DN-T1-GE3
Vishay Siliconix, P-Channel 150V 2.8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
IRLML2246TRPBF
Infineon Technologies, P-Channel 20V 2.6A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
View
SISS65DN-T1-GE3 - Tags