SI2329DS-T1-GE3
SI2329DS-T1-GE3
Part Number SI2329DS-T1-GE3 Description MOSFET P-CH 8V 6A SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 8V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2329DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2329DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2329DS-T1-GE3.
We are offering SI2329DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2329DS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2329DS-T1-GE3 Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 30mOhm @ 5.3A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V Vgs (Max) ±5V Input Capacitance (Ciss) (Max) @ Vds 1485pF @ 4V FET Feature - Power Dissipation (Max) 2.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
SI2329DS-T1-GE3 - Related ProductsMore >>
SSM3J371R,LF Toshiba Semiconductor and Storage, P-Channel 20V 4A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI
View
PMF170XP,115 Nexperia USA Inc., P-Channel 20V 1A (Ta) 290mW (Ta), 1.67W (Tc) Surface Mount SC-70,
View
ECH8315-TL-H ON Semiconductor, P-Channel 30V 7.5A (Ta) 1.5W (Ta) Surface Mount 8-ECH,
View
SSM3J371R,LF Toshiba Semiconductor and Storage, P-Channel 20V 4A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI
View
DMP2045UFY4-7 Diodes Incorporated, P-Channel 20V 4.7A (Ta) 670mW (Ta) Surface Mount X2-DFN2015-3,
View
FDN304PZ ON Semiconductor, P-Channel 20V 2.4A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®
View
IRF9610PBF Vishay Siliconix, P-Channel 200V 1.8A (Tc) 20W (Tc) Through Hole TO-220AB,
View
FQP12P10 ON Semiconductor, P-Channel 100V 11.5A (Tc) 75W (Tc) Through Hole TO-220-3, QFET®
View
SSM3J35MFV,L3F Toshiba Semiconductor and Storage, P-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount VESM,
View
SQD50P03-07_GE3 Vishay Siliconix, P-Channel 30V 50A (Tc) 136W (Tc) Surface Mount TO-252AA,
View
FQD5P10TM ON Semiconductor, P-Channel 100V 3.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak, QFET®
View
SIA421DJ-T1-GE3 Vishay Siliconix, P-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®
View
SI2329DS-T1-GE3 - Tags
English
