Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2329DS-T1-GE3

SI2329DS-T1-GE3

SI2329DS-T1-GE3

Part NumberSI2329DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 8V 6A SOT-23

DatasheetSI2329DS-T1-GE3

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 8V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2329DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2329DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2329DS-T1-GE3.
We are offering SI2329DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2329DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2329DS-T1-GE3
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	30mOhm @ 5.3A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	29nC @ 4.5V
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	1485pF @ 4V
FET Feature	-
Power Dissipation (Max)	2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2329DS-T1-GE3 - Related Products

	SUD09P10-195-GE3	Vishay Siliconix, P-Channel 100V 8.8A (Tc) 2.5W (Ta), 32.1W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	IPD90P04P4L04ATMA1	Infineon Technologies, P-Channel 40V 90A (Tc) 125W (Tc) Surface Mount PG-TO252-3-313, OptiMOS™	View
	STD36P4LLF6	STMicroelectronics, P-Channel 40V 36A (Tc) 60W (Tc) Surface Mount DPAK, STripFET™ F6	View
	NVTFS5124PLTAG	ON Semiconductor, P-Channel 60V 2.4A (Ta) 3W (Ta), 18W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	SI8817DB-T2-E1	Vishay Siliconix, P-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®	View
	RZM002P02T2L	Rohm Semiconductor, P-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount VMT3,	View
	IRFHM9331TRPBF	Infineon Technologies, P-Channel 30V 11A (Ta), 24A (Tc) 2.8W (Ta) Surface Mount PQFN (3x3), HEXFET®	View
	SI4431BDY-T1-E3	Vishay Siliconix, P-Channel 30V 5.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	FQD2P40TM	ON Semiconductor, P-Channel 400V 1.56A (Tc) 2.5W (Ta), 38W (Tc) Surface Mount D-Pak, QFET®	View
	BSS84-HF	Comchip Technology, P-Channel 50V 130mA (Ta) 225mW (Ta) Surface Mount SOT-23-3,	View
	SI4485DY-T1-GE3	Vishay Siliconix, P-Channel 30V 6A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®	View
	SI6415DQ-T1-E3	Vishay Siliconix, P-Channel 30V 1.5W (Ta) Surface Mount 8-TSSOP, TrenchFET®	View

SI2329DS-T1-GE3 - Tags

SI2329DS-T1-GE3 SI2329DS-T1-GE3 PDF SI2329DS-T1-GE3 datasheet SI2329DS-T1-GE3 specification SI2329DS-T1-GE3 image SI2329DS-T1-GE3 India Renesas Electronics India SI2329DS-T1-GE3 buy SI2329DS-T1-GE3 SI2329DS-T1-GE3 price SI2329DS-T1-GE3 distributor SI2329DS-T1-GE3 supplier SI2329DS-T1-GE3 wholesales