Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2367DS-T1-GE3

SI2367DS-T1-GE3

SI2367DS-T1-GE3

Part NumberSI2367DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 3.8A SOT-23

DatasheetSI2367DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2367DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2367DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2367DS-T1-GE3.
We are offering SI2367DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2367DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2367DS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	66mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	561pF @ 10V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2367DS-T1-GE3 - Related Products

	MIC94052YC6-TR	Microchip Technology, P-Channel 6V 2A (Ta) 270mW (Ta) Surface Mount SC-70-6,	View
	SQA401EEJ-T1_GE3	Vishay Siliconix, P-Channel 20V 2.68A (Tc) 13.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single, Automotive, AEC-Q101, TrenchFET®	View
	AON7421	Alpha & Omega Semiconductor Inc., P-Channel 20V 30A (Ta), 50A (Tc) 6.2W (Ta), 83W (Tc) Surface Mount 8-DFN-EP (3.3x3.3),	View
	PMV100XPEAR	Nexperia USA Inc., P-Channel 20V 2.4A (Ta) 463mW (Ta), 1.9W (Tc) Surface Mount TO-236AB,	View
	MCQ4459-TP	Micro Commercial Co, P-Channel 30V 6.5A (Ta) 1.4W (Ta) Surface Mount 8-SOP,	View
	IRFR9110TRPBF	Vishay Siliconix, P-Channel 100V 3.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
	RQ5L015SPTL	Rohm Semiconductor, P-Channel 60V 1.5A (Ta) 1W (Ta) Surface Mount TSMT3,	View
	RU1E002SPTCL	Rohm Semiconductor, P-Channel 30V 250mA (Ta) 200mW (Ta) Surface Mount UMT3F,	View
	ECH8315-TL-H	ON Semiconductor, P-Channel 30V 7.5A (Ta) 1.5W (Ta) Surface Mount 8-ECH,	View
	SI4825DDY-T1-GE3	Vishay Siliconix, P-Channel 30V 14.9A (Tc) 2.7W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®	View
	SI3437DV-T1-GE3	Vishay Siliconix, P-Channel 150V 1.4A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	FQD11P06TM	ON Semiconductor, P-Channel 60V 9.4A (Tc) 2.5W (Ta), 38W (Tc) Surface Mount D-Pak, QFET®	View

SI2367DS-T1-GE3 - Tags

SI2367DS-T1-GE3 SI2367DS-T1-GE3 PDF SI2367DS-T1-GE3 datasheet SI2367DS-T1-GE3 specification SI2367DS-T1-GE3 image SI2367DS-T1-GE3 India Renesas Electronics India SI2367DS-T1-GE3 buy SI2367DS-T1-GE3 SI2367DS-T1-GE3 price SI2367DS-T1-GE3 distributor SI2367DS-T1-GE3 supplier SI2367DS-T1-GE3 wholesales