NTLJF3117PT1G
NTLJF3117PT1G
Part Number NTLJF3117PT1G Description MOSFET P-CH 20V 2.3A 6-WDFN Package / Case 6-WDFN Exposed PadUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 2.3A (Ta) 710mW (Ta) Surface Mount 6-WDFN (2x2)
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NTLJF3117PT1G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NTLJF3117P Standard Package 3000 Manufacturer ON Semiconductor Series µCool™ Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 100mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 531pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 710mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-WDFN (2x2) Package / Case 6-WDFN Exposed Pad
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