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NTLJF3117PT1G


NTLJF3117PT1G

Part NumberNTLJF3117PT1G

Manufacturer

Description

Datasheet

Package / Case6-WDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

NTLJF3117PT1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package3000
ManufacturerON Semiconductor
SeriesµCool™
PackagingTape & Reel (TR)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.2nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds531pF @ 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)710mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WDFN (2x2)
Package / Case6-WDFN Exposed Pad

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