SI2365EDS-T1-GE3
SI2365EDS-T1-GE3
Part Number SI2365EDS-T1-GE3 Description MOSFET P-CH 20V 5.9A TO-236 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount TO-236
To learn about the specification of SI2365EDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2365EDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2365EDS-T1-GE3.
We are offering SI2365EDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2365EDS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2365EDS Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 32mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 8V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 1W (Ta), 1.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236 Package / Case TO-236-3, SC-59, SOT-23-3
SI2365EDS-T1-GE3 - Related ProductsMore >>
SI2307-TP Micro Commercial Co, P-Channel 30V 2.7A (Ta) 1.1W (Ta) Surface Mount SOT-23,
View
SIS407DN-T1-GE3 Vishay Siliconix, P-Channel 20V 25A (Tc) 3.6W (Ta), 33W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
NTMS4177PR2G ON Semiconductor, P-Channel 30V 6.6A (Ta) 840mW (Ta) Surface Mount 8-SOIC,
View
NTR4502PT1G ON Semiconductor, P-Channel 30V 1.13A (Ta) 400mW (Tj) Surface Mount SOT-23-3 (TO-236),
View
RSF010P03TL Rohm Semiconductor, P-Channel 30V 1A (Ta) 800mW (Ta) Surface Mount TUMT3,
View
SI7421DN-T1-GE3 Vishay Siliconix, P-Channel 30V 6.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
IRFR9014TRLPBF Vishay Siliconix, P-Channel 60V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,
View
SI7415DN-T1-E3 Vishay Siliconix, P-Channel 60V 3.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
FQPF22P10 ON Semiconductor, P-Channel 100V 13.2A (Tc) 45W (Tc) Through Hole TO-220F, QFET®
View
SSM3J331R,LF Toshiba Semiconductor and Storage, P-Channel 20V 4A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI
View
SSM3J132TU,LF Toshiba Semiconductor and Storage, P-Channel 12V 5.4A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI
View
DMP3085LSS-13 Diodes Incorporated, P-Channel 30V 3.8A (Ta) 1.3W (Ta) Surface Mount 8-SO,
View
SI2365EDS-T1-GE3 - Tags
English
