Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SSM3J353F
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVI
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	150mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.4nC @ 4.5V
Vgs (Max)	+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds	159pF @ 15V
FET Feature	-
Power Dissipation (Max)	600mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	S-Mini
Package / Case	TO-236-3, SC-59, SOT-23-3

BSP92PH6327XTSA1	Infineon Technologies, P-Channel 250V 260mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®	View
FDN304P	ON Semiconductor, P-Channel 20V 2.4A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®	View
RTE002P02TL	Rohm Semiconductor, P-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount EMT3,	View
NVGS3443T1G	ON Semiconductor, P-Channel 20V 3.1A (Ta) Surface Mount 6-TSOP,	View
ZVP1320FTA	Diodes Incorporated, P-Channel 200V 35mA (Ta) 350mW (Ta) Surface Mount SOT-23-3,	View
SSM6J214FE(TE85L,F	Toshiba Semiconductor and Storage, P-Channel 30V 3.6A (Ta) 500mW (Ta) Surface Mount ES6, U-MOSVI	View
NVC6S5A354PLZT1G	ON Semiconductor, P-Channel 60V 4A (Ta) 1.9W (Ta) Surface Mount 6-CPH,	View
ZVP2106ASTZ	Diodes Incorporated, P-Channel 60V 280mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible),	View
SSM3J133TU,LF	Toshiba Semiconductor and Storage, P-Channel 20V 5.5A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI	View
SQD50P04-09L_GE3	Vishay Siliconix, P-Channel 40V 50A (Tc) 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
IRF9510SPBF	Vishay Siliconix, P-Channel 100V 4A (Tc) 43W (Tc) Surface Mount,	View
NTMS10P02R2G	ON Semiconductor, P-Channel 20V 8.8A (Ta) 1.6W (Ta) Surface Mount 8-SOIC,	View

SSM3J353F,LF

Part NumberSSM3J353F,LF