SIS413DN-T1-GE3
SIS413DN-T1-GE3
Part Number SIS413DN-T1-GE3 Description MOSFET P-CH 30V 18A PPAK 1212-8 Package / Case PowerPAK® 1212-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 18A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
To learn about the specification of SIS413DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS413DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS413DN-T1-GE3.
We are offering SIS413DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIS413DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIS413DN Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.4mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4280pF @ 15V FET Feature - Power Dissipation (Max) 3.7W (Ta), 52W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8
SIS413DN-T1-GE3 - Related ProductsMore >>
VP2106N3-G Microchip Technology, P-Channel 60V 250mA (Tj) 1W (Tc) Through Hole TO-92-3,
View
FDC610PZ ON Semiconductor, P-Channel 30V 4.9A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®
View
IPD50P04P413ATMA1 Infineon Technologies, P-Channel 40V 50A (Tc) 58W (Tc) Surface Mount PG-TO252-3-313, OptiMOS™
View
DMG3415UFY4Q-7 Diodes Incorporated, P-Channel 16V 2.5A (Ta) 650mW (Ta) Surface Mount X2-DFN2015-3,
View
IXTQ44P15T IXYS, P-Channel 150V 44A (Tc) 298W (Tc) Through Hole TO-3P, TrenchP™
View
SI2323DDS-T1-GE3 Vishay Siliconix, P-Channel 20V 5.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23, TrenchFET®
View
SI4413ADY-T1-E3 Vishay Siliconix, P-Channel 30V 10.5A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®
View
FDS4435BZ ON Semiconductor, P-Channel 30V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
SI3433CDV-T1-E3 Vishay Siliconix, P-Channel 20V 6A (Tc) 3.3W (Tc) Surface Mount 6-TSOP, TrenchFET®
View
MTM761110LBF Panasonic Electronic Components, P-Channel 12V 4A (Ta) 700mW (Ta) Surface Mount WSMini6-F1-B,
View
DMP4047SK3-13 Diodes Incorporated, P-Channel 40V 20A (Tc) 1.6W (Ta) Surface Mount TO-252,
View
IRLML2244TRPBF Infineon Technologies, P-Channel 20V 4.3A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
View
SIS413DN-T1-GE3 - Tags
English
