SCT3120ALGC11
SCT3120ALGC11
Part Number SCT3120ALGC11 Description MOSFET NCH 650V 21A TO247N Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 21A (Tc) 103W (Tc) Through Hole TO-247N
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SCT3120ALGC11 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SCT3120AL Standard Package 30 Manufacturer Rohm Semiconductor Series - Packaging Tube Part Status Active FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 18V Rds On (Max) @ Id, Vgs 156mOhm @ 6.7A, 18V Vgs(th) (Max) @ Id 5.6V @ 3.33mA Gate Charge (Qg) (Max) @ Vgs 38nC @ 18V Vgs (Max) +22V, -4V Input Capacitance (Ciss) (Max) @ Vds 460pF @ 500V FET Feature - Power Dissipation (Max) 103W (Tc) Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247N Package / Case TO-247-3
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