Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SCT2120AF Datasheet
Standard Package	1000
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	156mOhm @ 10A, 18V
Vgs(th) (Max) @ Id	4V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs	61nC @ 18V
Vgs (Max)	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 500V
FET Feature	-
Power Dissipation (Max)	165W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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C2M0080170P	Cree/Wolfspeed, N-Channel 1700V 40A (Tc) 277W (Tc) Through Hole TO-247-4, C2M™	View
SCT50N120	STMicroelectronics, N-Channel 1200V 65A (Tc) 318W (Tc) Through Hole HiP247™,	View
C3M0075120D	Cree/Wolfspeed, N-Channel 1200V 30A (Tc) 113.6W (Tc) Through Hole TO-247-3, C3M™	View
E3M0065090D	Cree/Wolfspeed, N-Channel 900V 35A (Tc) 125W (Tc) Through Hole TO-247-3, Automotive, AEC-Q101, E	View
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SCT2120AFC

Part NumberSCT2120AFC