Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	C3M0065090J
Standard Package	50
Manufacturer	Cree/Wolfspeed
Series	C3M™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	78mOhm @ 20A, 15V
Vgs(th) (Max) @ Id	2.1V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 15V
Vgs (Max)	+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds	660pF @ 600V
FET Feature	-
Power Dissipation (Max)	113W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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C2M1000170D	Cree/Wolfspeed, N-Channel 1700V 4.9A (Tc) 69W (Tc) Through Hole TO-247-3, Z-FET™	View
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C2M0080170P	Cree/Wolfspeed, N-Channel 1700V 40A (Tc) 277W (Tc) Through Hole TO-247-4, C2M™	View
SCT3030ALHRC11	Rohm Semiconductor, N-Channel 650V 70A (Tc) 262W Through Hole TO-247N, Automotive, AEC-Q101	View

C3M0065090J

Part NumberC3M0065090J