SCT20N120
SCT20N120
Part Number SCT20N120
Description MOSFET N-CH 1200V 20A HIP247
Package / Case TO-247-3
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Lead Time To be Confirmed
Detailed Description N-Channel 1200V 20A (Tc) 175W (Tc) Through Hole HiP247™
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SCT20N120 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SCT20N120
Standard Package 30
Manufacturer STMicroelectronics
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 20V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 20V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 400V
FET Feature -
Power Dissipation (Max) 175W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Supplier Device Package HiP247™
Package / Case TO-247-3
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