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SCT30N120


SCT30N120

Part NumberSCT30N120

Manufacturer

Description

Datasheet

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SCT30N120 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package30
ManufacturerSTMicroelectronics
Series-
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id2.6V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs105nC @ 20V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds1700pF @ 400V
FET Feature-
Power Dissipation (Max)270W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3

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SCT30N120 - Tags

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