LSIC1MO170E1000
LSIC1MO170E1000
Part Number LSIC1MO170E1000 Description MOSFET SIC 1700V N-CH TO-247-3L Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1700V 5A (Tc) 54W (Tc) Through Hole TO-247-3L
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LSIC1MO170E1000 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet LSIC1MO170E1000 Datasheet Standard Package 450 Manufacturer Littelfuse Inc. Series - Part Status Active FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1700V Current - Continuous Drain (Id) @ 25°C 5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V, 20V Rds On (Max) @ Id, Vgs 1Ohm @ 2A, 20V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 15nC @ 20V Vgs (Max) +22V, -6V Input Capacitance (Ciss) (Max) @ Vds 200pF @ 1000V FET Feature - Power Dissipation (Max) 54W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3L Package / Case TO-247-3
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