Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSM180C12P2E202 Datasheet
Standard Package	4
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Tray
Part Status	Active
FET Type	N-Channel
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) @ 25°C	204A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	4V @ 35.2mA
Vgs (Max)	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds	20000pF @ 10V
FET Feature	-
Power Dissipation (Max)	1360W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	Module
Package / Case	Module

C3M0120090J-TR	Cree/Wolfspeed, N-Channel 900V 22A (Tc) 83W (Tc) Surface Mount D2PAK-7, C3M™	View
E3M0120090D	Cree/Wolfspeed, N-Channel 900V 23A (Tc) 97W (Tc) Through Hole TO-247-3, Automotive, AEC-Q101, E	View
C2M0280120D	Cree/Wolfspeed, N-Channel 1200V 10A (Tc) 62.5W (Tc) Through Hole TO-247-3, Z-FET™	View
SCT30N120	STMicroelectronics, N-Channel 1200V 40A (Tc) 270W (Tc) Through Hole HiP247™,	View
C3M0075120D	Cree/Wolfspeed, N-Channel 1200V 30A (Tc) 113.6W (Tc) Through Hole TO-247-3, C3M™	View
C3M0120090D	Cree/Wolfspeed, N-Channel 900V 23A (Tc) 97W (Tc) Through Hole TO-247-3, C3M™	View
SCT3030KLHRC11	Rohm Semiconductor, N-Channel 1200V 72A (Tc) 339W Through Hole TO-247N, Automotive, AEC-Q101	View
SCT20N120	STMicroelectronics, N-Channel 1200V 20A (Tc) 175W (Tc) Through Hole HiP247™,	View
E3M0280090D	Cree/Wolfspeed, N-Channel 900V 11.5A (Tc) 54W (Tc) Through Hole TO-247-3, Automotive, AEC-Q101, E	View
C2M1000170D	Cree/Wolfspeed, N-Channel 1700V 4.9A (Tc) 69W (Tc) Through Hole TO-247-3, Z-FET™	View
SCT2H12NYTB	Rohm Semiconductor, N-Channel 1700V 4A (Tc) 44W (Tc) Surface Mount TO-268,	View
SCT3022KLHRC11	Rohm Semiconductor, N-Channel 1200V 95A (Tc) 427W Through Hole TO-247N, Automotive, AEC-Q101	View

BSM180C12P2E202

Part NumberBSM180C12P2E202