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BSM180C12P2E202


BSM180C12P2E202

Part NumberBSM180C12P2E202

Manufacturer

Description

Datasheet

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Lead TimeTo be Confirmed

Detailed Description

BSM180C12P2E202 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package4
ManufacturerRohm Semiconductor
Series-
PackagingTray
Part StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C204A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id4V @ 35.2mA
Vgs (Max)+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds20000pF @ 10V
FET Feature-
Power Dissipation (Max)1360W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageModule
Package / CaseModule

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