MT3S111P(TE12L,F)
MT3S111P(TE12L,F)
Part Number MT3S111P(TE12L,F)
Description RF TRANS NPN 6V 8GHZ PW-MINI
Package / Case TO-243AA
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Lead Time To be Confirmed
Detailed Description RF Transistor NPN 6V 100mA 8GHz 1W Surface Mount PW-MINI
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MT3S111P(TE12L,F) - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet MT3S111P
Standard Package 1000
Manufacturer Toshiba Semiconductor and Storage
Series -
Packaging Tape & Reel (TR)
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 6V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 1.25dB @ 1GHz
Gain 10.5dB
Power - Max 1W
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Current - Collector (Ic) (Max) 100mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package PW-MINI
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MT3S111P(TE12L,F) - Tags
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